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Number 2241 Application Note Making Ultra-Low Current Measurements Series with the Low-Noise Model 4200-SCS Semiconductor Characterization System Introduction associated with connecting these grounds together. Sometimes, however, the power line ground can be noisy. In other cases, a Parametric characterization of semiconductor devices typically test fixture and probe station connected to the instrument may requires making extremely low current measurements. For create a ground loop that generates additional noise. Due to these MOSFET devices, the gate voltage controls the on/off of the concerns, ensuring low-level measurement accuracy demands MOSFET, in other words, the drain current flow. The off state that the system grounding be thought out carefully. current and the transition from the on state to the off state (the subthreshold current) are both of critical importance in the per- formance of a ULSI CMOS circuit. In modern, highly integrated GNDU circuits, the off state current is typically on the order of just M 1 S E femtoamps. Furthermore, there are a number of device phenome- N S INSTRUMENT CONNECTIONS E na that are of critical importance in device characterization, such SMU ONLY SENSE LO GUARD as Gate Induced Drain Leakage (GIDL). Therefore, it is very F SENSE LO PT 1 O important to have a tightly integrated parametric characterization R COMMON C system that is capable of making these ultra-low c